Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
- 作者: Sakharov A.1, Kurbanova N.2, Demchenko O.2, Sim P.2, Yagovkina M.1, Tsatsulnikov A.3, Usov S.3, Zakheim D.1, Zavarin E.1, Lundin W.1, Velikovskiy L.2
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隶属关系:
- Ioffe Institute
- Tomsk State University
- Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
- 期: 卷 52, 编号 14 (2018)
- 页面: 1843-1845
- 栏目: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205045
- DOI: https://doi.org/10.1134/S1063782618140257
- ID: 205045
如何引用文章
详细
InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and SiC substrates. Optimization of GaN buffer and InAlN layers allows fabricating structures with sheet conductivity values below 210 Ohm/sq. High electron mobility transistors (HEMTs) fabricated from such structures show drain current value exceeding 1.25 A/mm with maximum transconductance of 450 mS/mm. Use of thin in situ Si3N4 capping allows to fabricate and compare HEMT and MIS-HEMTs.
作者简介
A. Sakharov
Ioffe Institute
编辑信件的主要联系方式.
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
N. Kurbanova
Tomsk State University
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, Tomsk
O. Demchenko
Tomsk State University
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, Tomsk
P. Sim
Tomsk State University
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, Tomsk
M. Yagovkina
Ioffe Institute
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
S. Usov
Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
D. Zakheim
Ioffe Institute
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
E. Zavarin
Ioffe Institute
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
W. Lundin
Ioffe Institute
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, St. Petersburg
L. Velikovskiy
Tomsk State University
Email: val.beam@mail.ioffe.ru
俄罗斯联邦, Tomsk