Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection
- 作者: Aleksandrov O.1, Ageev A.1, Zolotarev S.1
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隶属关系:
- St. Petersburg State Electrotechnical University “LETI”
- 期: 卷 52, 编号 13 (2018)
- 页面: 1732-1737
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204901
- DOI: https://doi.org/10.1134/S1063782618130031
- ID: 204901
如何引用文章
详细
Charge accumulation in metal—oxide—semiconductor (MOS) structures with a doped and undoped polysilicon gate with Al contacts and without them under tunnel electron injection from the gate and silicon substrate is investigated. It is shown that negative charge is accumulated near the polysilicon gate irrespective of the injection polarity, and positive charge is accumulated near the silicon substrate. Negative charge also appears near the silicon substrate at large injection charges. The results are described with the help of a numerical model, in which the formation of electron traps with the deposition of Al contacts and the generation of electron traps during the recombination of free electrons with holes captured at traps is taken into account.
作者简介
O. Aleksandrov
St. Petersburg State Electrotechnical University “LETI”
编辑信件的主要联系方式.
Email: Aleksandr_ov@mail.ru
俄罗斯联邦, St. Petersburg, 197376
A. Ageev
St. Petersburg State Electrotechnical University “LETI”
Email: Aleksandr_ov@mail.ru
俄罗斯联邦, St. Petersburg, 197376
S. Zolotarev
St. Petersburg State Electrotechnical University “LETI”
Email: Aleksandr_ov@mail.ru
俄罗斯联邦, St. Petersburg, 197376