Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers
- 作者: Kozlov D.1,2, Rumyantsev V.1,2, Morozov S.1,2, Kadykov A.1, Fadeev M.1, Hübers H.3, Gavrilenko V.1,2
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隶属关系:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Institut für Physik, Humboldt-Universität zu Berlin
- 期: 卷 52, 编号 11 (2018)
- 页面: 1369-1374
- 栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204243
- DOI: https://doi.org/10.1134/S1063782618110131
- ID: 204243
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详细
A method for calculating the states of multivalent donors and acceptors in Hg1 –xCdxTe materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg1 –xCdxTe films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg1 –xCdxTe films.
作者简介
D. Kozlov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: dvkoz@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Morozov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: dvkoz@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
M. Fadeev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: dvkoz@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
H.-W. Hübers
Institut für Physik, Humboldt-Universität zu Berlin
Email: dvkoz@ipmras.ru
德国, Berlin, 12489
V. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950