Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals
- 作者: Yafarov R.1
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
- 期: 卷 52, 编号 9 (2018)
- 页面: 1104-1109
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203959
- DOI: https://doi.org/10.1134/S1063782618090245
- ID: 203959
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详细
The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.
作者简介
R. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
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