Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals
- Авторлар: Yafarov R.1
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Мекемелер:
- Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1104-1109
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203959
- DOI: https://doi.org/10.1134/S1063782618090245
- ID: 203959
Дәйексөз келтіру
Аннотация
The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.
Авторлар туралы
R. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: pirpc@yandex.ru
Ресей, Saratov, 410019