Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation
- 作者: Elistratova M.1, Poloskin D.1, Goryachev D.1, Zakharova I.2, Sreseli O.1
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隶属关系:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 52, 编号 8 (2018)
- 页面: 1051-1055
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203890
- DOI: https://doi.org/10.1134/S1063782618080067
- ID: 203890
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详细
Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.
作者简介
M. Elistratova
Ioffe Institute
编辑信件的主要联系方式.
Email: marina.elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Poloskin
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Zakharova
Peter the Great St. Petersburg Polytechnic University
Email: marina.elistratova@mail.ioffe.ru
俄罗斯联邦, St Petersburg, 195251
O. Sreseli
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021