Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation
- Autores: Elistratova M.1, Poloskin D.1, Goryachev D.1, Zakharova I.2, Sreseli O.1
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Afiliações:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- Edição: Volume 52, Nº 8 (2018)
- Páginas: 1051-1055
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203890
- DOI: https://doi.org/10.1134/S1063782618080067
- ID: 203890
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Resumo
Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.
Sobre autores
M. Elistratova
Ioffe Institute
Autor responsável pela correspondência
Email: marina.elistratova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
D. Poloskin
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Zakharova
Peter the Great St. Petersburg Polytechnic University
Email: marina.elistratova@mail.ioffe.ru
Rússia, St Petersburg, 195251
O. Sreseli
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
Rússia, St. Petersburg, 194021