Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation
- Авторлар: Elistratova M.1, Poloskin D.1, Goryachev D.1, Zakharova I.2, Sreseli O.1
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Мекемелер:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 52, № 8 (2018)
- Беттер: 1051-1055
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203890
- DOI: https://doi.org/10.1134/S1063782618080067
- ID: 203890
Дәйексөз келтіру
Аннотация
Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.
Авторлар туралы
M. Elistratova
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: marina.elistratova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
D. Poloskin
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
D. Goryachev
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Zakharova
Peter the Great St. Petersburg Polytechnic University
Email: marina.elistratova@mail.ioffe.ru
Ресей, St Petersburg, 195251
O. Sreseli
Ioffe Institute
Email: marina.elistratova@mail.ioffe.ru
Ресей, St. Petersburg, 194021