Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals
- 作者: Veinger A.1, Kochman I.1, Okulov V.2, Andriichuk M.3, Paranchich L.3
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隶属关系:
- Ioffe Institute
- Mikheev Institute of Metal Physics, Ural Branch
- Chernivtsy National University
- 期: 卷 52, 编号 8 (2018)
- 页面: 980-985
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203801
- DOI: https://doi.org/10.1134/S1063782618080237
- ID: 203801
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详细
Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.
作者简介
A. Veinger
Ioffe Institute
Email: kochman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Kochman
Ioffe Institute
编辑信件的主要联系方式.
Email: kochman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics, Ural Branch
Email: kochman@mail.ioffe.ru
俄罗斯联邦, Yekaterinburg, 620137
M. Andriichuk
Chernivtsy National University
Email: kochman@mail.ioffe.ru
乌克兰, Chernivtsy, 58012
L. Paranchich
Chernivtsy National University
Email: kochman@mail.ioffe.ru
乌克兰, Chernivtsy, 58012