Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals
- Autores: Veinger A.1, Kochman I.1, Okulov V.2, Andriichuk M.3, Paranchich L.3
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Afiliações:
- Ioffe Institute
- Mikheev Institute of Metal Physics, Ural Branch
- Chernivtsy National University
- Edição: Volume 52, Nº 8 (2018)
- Páginas: 980-985
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203801
- DOI: https://doi.org/10.1134/S1063782618080237
- ID: 203801
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Resumo
Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.
Sobre autores
A. Veinger
Ioffe Institute
Email: kochman@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Kochman
Ioffe Institute
Autor responsável pela correspondência
Email: kochman@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics, Ural Branch
Email: kochman@mail.ioffe.ru
Rússia, Yekaterinburg, 620137
M. Andriichuk
Chernivtsy National University
Email: kochman@mail.ioffe.ru
Ucrânia, Chernivtsy, 58012
L. Paranchich
Chernivtsy National University
Email: kochman@mail.ioffe.ru
Ucrânia, Chernivtsy, 58012