Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals
- Авторы: Veinger A.1, Kochman I.1, Okulov V.2, Andriichuk M.3, Paranchich L.3
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Учреждения:
- Ioffe Institute
- Mikheev Institute of Metal Physics, Ural Branch
- Chernivtsy National University
- Выпуск: Том 52, № 8 (2018)
- Страницы: 980-985
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203801
- DOI: https://doi.org/10.1134/S1063782618080237
- ID: 203801
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Аннотация
Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.
Об авторах
A. Veinger
Ioffe Institute
Email: kochman@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Kochman
Ioffe Institute
Автор, ответственный за переписку.
Email: kochman@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics, Ural Branch
Email: kochman@mail.ioffe.ru
Россия, Yekaterinburg, 620137
M. Andriichuk
Chernivtsy National University
Email: kochman@mail.ioffe.ru
Украина, Chernivtsy, 58012
L. Paranchich
Chernivtsy National University
Email: kochman@mail.ioffe.ru
Украина, Chernivtsy, 58012