Study of the Properties of II–VI and III–V Semiconductor Quantum Dots
- 作者: Mikhailov A.1, Kabanov V.1, Gorbachev I.1, Glukhovsky E.1
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隶属关系:
- Saratov State National Research University
- 期: 卷 52, 编号 6 (2018)
- 页面: 750-754
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203500
- DOI: https://doi.org/10.1134/S1063782618060155
- ID: 203500
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详细
The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.
作者简介
A. Mikhailov
Saratov State National Research University
Email: v7021961@yandex.ru
俄罗斯联邦, Saratov, 410012
V. Kabanov
Saratov State National Research University
编辑信件的主要联系方式.
Email: v7021961@yandex.ru
俄罗斯联邦, Saratov, 410012
I. Gorbachev
Saratov State National Research University
Email: v7021961@yandex.ru
俄罗斯联邦, Saratov, 410012
E. Glukhovsky
Saratov State National Research University
Email: v7021961@yandex.ru
俄罗斯联邦, Saratov, 410012