Study of the Properties of II–VI and III–V Semiconductor Quantum Dots
- Authors: Mikhailov A.I.1, Kabanov V.F.1, Gorbachev I.A.1, Glukhovsky E.G.1
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Affiliations:
- Saratov State National Research University
- Issue: Vol 52, No 6 (2018)
- Pages: 750-754
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203500
- DOI: https://doi.org/10.1134/S1063782618060155
- ID: 203500
Cite item
Abstract
The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.
About the authors
A. I. Mikhailov
Saratov State National Research University
Email: v7021961@yandex.ru
Russian Federation, Saratov, 410012
V. F. Kabanov
Saratov State National Research University
Author for correspondence.
Email: v7021961@yandex.ru
Russian Federation, Saratov, 410012
I. A. Gorbachev
Saratov State National Research University
Email: v7021961@yandex.ru
Russian Federation, Saratov, 410012
E. G. Glukhovsky
Saratov State National Research University
Email: v7021961@yandex.ru
Russian Federation, Saratov, 410012