Study of the Properties of II–VI and III–V Semiconductor Quantum Dots
- Autores: Mikhailov A.1, Kabanov V.1, Gorbachev I.1, Glukhovsky E.1
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Afiliações:
- Saratov State National Research University
- Edição: Volume 52, Nº 6 (2018)
- Páginas: 750-754
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203500
- DOI: https://doi.org/10.1134/S1063782618060155
- ID: 203500
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Resumo
The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.
Sobre autores
A. Mikhailov
Saratov State National Research University
Email: v7021961@yandex.ru
Rússia, Saratov, 410012
V. Kabanov
Saratov State National Research University
Autor responsável pela correspondência
Email: v7021961@yandex.ru
Rússia, Saratov, 410012
I. Gorbachev
Saratov State National Research University
Email: v7021961@yandex.ru
Rússia, Saratov, 410012
E. Glukhovsky
Saratov State National Research University
Email: v7021961@yandex.ru
Rússia, Saratov, 410012