New Method of Porous Ge Layer Fabrication: Structure and Optical Properties
- 作者: Gorokhov E.1, Astankova K.1, Azarov I.1,2, Volodin V.1,2, Latyshev A.1,2
-
隶属关系:
- Institute of Semiconductor Physics SB Russian Academy of Sciences
- Novosibirsk State University
- 期: 卷 52, 编号 5 (2018)
- 页面: 628-631
- 栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203231
- DOI: https://doi.org/10.1134/S1063782618050111
- ID: 203231
如何引用文章
详细
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2
作者简介
E. Gorokhov
Institute of Semiconductor Physics SB Russian Academy of Sciences
编辑信件的主要联系方式.
Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
K. Astankova
Institute of Semiconductor Physics SB Russian Academy of Sciences
Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Azarov
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Volodin
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090