New Method of Porous Ge Layer Fabrication: Structure and Optical Properties


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Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2 heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2 heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

作者简介

E. Gorokhov

Institute of Semiconductor Physics SB Russian Academy of Sciences

编辑信件的主要联系方式.
Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

K. Astankova

Institute of Semiconductor Physics SB Russian Academy of Sciences

Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

I. Azarov

Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University

Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

V. Volodin

Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University

Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

A. Latyshev

Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University

Email: gorokhov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090


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