New Method of Porous Ge Layer Fabrication: Structure and Optical Properties
- Autores: Gorokhov E.B.1, Astankova K.N.1, Azarov I.A.1,2, Volodin V.A.1,2, Latyshev A.V.1,2
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Afiliações:
- Institute of Semiconductor Physics SB Russian Academy of Sciences
- Novosibirsk State University
- Edição: Volume 52, Nº 5 (2018)
- Páginas: 628-631
- Seção: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203231
- DOI: https://doi.org/10.1134/S1063782618050111
- ID: 203231
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Resumo
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2
Sobre autores
E. Gorokhov
Institute of Semiconductor Physics SB Russian Academy of Sciences
Autor responsável pela correspondência
Email: gorokhov@isp.nsc.ru
Rússia, Novosibirsk, 630090
K. Astankova
Institute of Semiconductor Physics SB Russian Academy of Sciences
Email: gorokhov@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Azarov
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
V. Volodin
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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