The Features of GaAs Nanowire SEM Images

I. P. Soshnikov; K. P. Kotlyar; N. A. Bert; D. A. Kirilenko; A. D. Bouravleuv; G. E. Cirlin

doi:10.1134/S1063782618050317

The Features of GaAs Nanowire SEM Images

作者: Soshnikov I.¹^,2^,3, Kotlyar K.¹^,4, Bert N.², Kirilenko D.²^,5, Bouravleuv A.¹^,2^,3, Cirlin G.¹^,2^,3^,4
隶属关系:
1. St. Petersburg Academic University Russian Academy of Sciences
2. Ioffe Institute
3. Institute for Analytical Instrumentation Russian Academy of Sciences
4. St. Petersburg State University
5. ITMO University
期: 卷 52, 编号 5 (2018)
页面: 605-608
栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
URL: https://journals.rcsi.science/1063-7826/article/view/203142
DOI: https://doi.org/10.1134/S1063782618050317
ID: 203142

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The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.

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The Features of GaAs Nanowire SEM Images

全文:

详细

作者简介

I. Soshnikov

K. Kotlyar

N. Bert

D. Kirilenko

A. Bouravleuv

G. Cirlin