Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate


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详细

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

作者简介

I. Shtrom

St. Petersburg Academic University; Institute for Analytical Instrumentation; St. Petersburg State University

编辑信件的主要联系方式.
Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 199034

N. Filosofov

St. Petersburg State University

Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 199034

V. Agekian

St. Petersburg State University

Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 199034

M. Smirnov

St. Petersburg State University

Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 199034

A. Serov

St. Petersburg State University

Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 199034

R. Reznik

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

K. Kudryavtsev

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: igorstrohm@mail.ru
俄罗斯联邦, Nizhny Novgorod, 603950

G. Cirlin

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

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