Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate


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Resumo

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

Sobre autores

I. Shtrom

St. Petersburg Academic University; Institute for Analytical Instrumentation; St. Petersburg State University

Autor responsável pela correspondência
Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 199034

N. Filosofov

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

V. Agekian

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

M. Smirnov

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

A. Serov

St. Petersburg State University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 199034

R. Reznik

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101

K. Kudryavtsev

Institute for Physics of Microstructures of the Russian Academy of Sciences

Email: igorstrohm@mail.ru
Rússia, Nizhny Novgorod, 603950

G. Cirlin

St. Petersburg Academic University; Institute for Analytical Instrumentation; ITMO University

Email: igorstrohm@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101


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