Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

D. I. Bilenko; O. Ya. Belobrovaya; D. V. Terin; V. V. Galushka; I. V. Galushka; E. A. Zharkova; V. P. Polyanskaya; V. I. Sidorov; I. T. Yagudin

doi:10.1134/S1063782618030077

Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

作者: Bilenko D.¹, Belobrovaya O.¹, Terin D.¹, Galushka V.¹, Galushka I.¹, Zharkova E.¹, Polyanskaya V.¹, Sidorov V.¹, Yagudin I.¹
隶属关系:
1. Saratov State University
期: 卷 52, 编号 3 (2018)
页面: 331-334
栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/202589
DOI: https://doi.org/10.1134/S1063782618030077
ID: 202589

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The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a ²²⁶Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.