Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon
- Authors: Bilenko D.I.1, Belobrovaya O.Y.1, Terin D.V.1, Galushka V.V.1, Galushka I.V.1, Zharkova E.A.1, Polyanskaya V.P.1, Sidorov V.I.1, Yagudin I.T.1
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Affiliations:
- Saratov State University
- Issue: Vol 52, No 3 (2018)
- Pages: 331-334
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202589
- DOI: https://doi.org/10.1134/S1063782618030077
- ID: 202589
Cite item
Abstract
The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.
About the authors
D. I. Bilenko
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
O. Ya. Belobrovaya
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
D. V. Terin
Saratov State University
Author for correspondence.
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
V. V. Galushka
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
I. V. Galushka
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
E. A. Zharkova
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
V. P. Polyanskaya
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
V. I. Sidorov
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
I. T. Yagudin
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012