Email this article Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
- Authors: Nikiforov V.E.1, Abramkin D.S.2,1, Shamirzaev T.S.2,1,3
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Affiliations:
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Ural Federal University
- Issue: Vol 51, No 11 (2017)
- Pages: 1513-1516
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201850
- DOI: https://doi.org/10.1134/S1063782617110203
- ID: 201850
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Abstract
It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
About the authors
V. E. Nikiforov
Novosibirsk State University
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. S. Abramkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
T. S. Shamirzaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Ural Federal University
Author for correspondence.
Email: tim@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002
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