Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
- 作者: Zabavichev I.1, Obolenskaya E.1, Potekhin A.1, Puzanov A.1, Obolensky S.1, Kozlov V.1,2
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隶属关系:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures
- 期: 卷 51, 编号 11 (2017)
- 页面: 1435-1438
- 栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201523
- DOI: https://doi.org/10.1134/S1063782617110288
- ID: 201523
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详细
The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.
作者简介
I. Zabavichev
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Potekhin
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Puzanov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
S. Obolensky
Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 607680