Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects
- Авторлар: Zabavichev I.1, Obolenskaya E.1, Potekhin A.1, Puzanov A.1, Obolensky S.1, Kozlov V.1,2
-
Мекемелер:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures
- Шығарылым: Том 51, № 11 (2017)
- Беттер: 1435-1438
- Бөлім: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201523
- DOI: https://doi.org/10.1134/S1063782617110288
- ID: 201523
Дәйексөз келтіру
Аннотация
The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.
Авторлар туралы
I. Zabavichev
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
A. Potekhin
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
A. Puzanov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
S. Obolensky
Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 607680