Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation


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The influence of the effective concentration of an impurity specifying the conduction type of the base region and the base thickness on the radiation resistance of transistor temperature sensors is investigated. The dependences of the forward voltage drop at the emitter transistor junction and current amplification factor on the magnitude of electron, neutron, and γ-quanta flows are revealed. It is found that degradation of the forward voltage drop under the effect of ionizing radiation begins at doses higher by almost two orders of magnitude than the current amplification factor depending on the transistor’s design features. The reproducibility of the temperature-sensitive parameter, which increases the yield percentage of suitable devices, increases after annealing of the electron-irradiated structures.

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I. Vikulin

Odessa National Academy of Communication

编辑信件的主要联系方式.
Email: physonat@gmail.com
乌克兰, Odessa, 65029

V. Gorbachev

Odessa National Academy of Communication

Email: physonat@gmail.com
乌克兰, Odessa, 65029

Sh. Kurmashev

Odessa National Academy of Communication

Email: physonat@gmail.com
乌克兰, Odessa, 65029

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