Diffusion of interstitial magnesium in dislocation-free silicon
- 作者: Shuman V.1, Lavrent’ev A.1, Astrov Y.1, Lodygin A.1, Portsel L.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 51, 编号 1 (2017)
- 页面: 1-3
- 栏目: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/199259
- DOI: https://doi.org/10.1134/S1063782617010237
- ID: 199259
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详细
The diffusion of magnesium impurity in the temperature range T = 600–800°C in dislocation-free single-crystal silicon wafers of p-type conductivity is studied. The surface layer of the wafer doped with magnesium by the ion implantation technique serves as the diffusion source. Implantation is carried out at an ion energy of 150 keV at doses of 5 × 1014 and 2 × 1015 cm–2. The diffusion coefficient of interstitial magnesium donor centers (Di) is determined by measuring the depth of the p–n junction, which is formed in the sample due to annealing during the time t at a given T. As a result of the study, the dependence Di(T) is found for the first time. The data show that the diffusion process occurs mainly by the interstitial mechanism.
作者简介
V. Shuman
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: Shuman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Astrov
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lodygin
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
L. Portsel
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021