Diffusion of interstitial magnesium in dislocation-free silicon
- Authors: Shuman V.B.1, Lavrent’ev A.A.1, Astrov Y.A.1, Lodygin A.N.1, Portsel L.M.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 51, No 1 (2017)
- Pages: 1-3
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/199259
- DOI: https://doi.org/10.1134/S1063782617010237
- ID: 199259
Cite item
Abstract
The diffusion of magnesium impurity in the temperature range T = 600–800°C in dislocation-free single-crystal silicon wafers of p-type conductivity is studied. The surface layer of the wafer doped with magnesium by the ion implantation technique serves as the diffusion source. Implantation is carried out at an ion energy of 150 keV at doses of 5 × 1014 and 2 × 1015 cm–2. The diffusion coefficient of interstitial magnesium donor centers (Di) is determined by measuring the depth of the p–n junction, which is formed in the sample due to annealing during the time t at a given T. As a result of the study, the dependence Di(T) is found for the first time. The data show that the diffusion process occurs mainly by the interstitial mechanism.
About the authors
V. B. Shuman
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Astrov
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Lodygin
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. M. Portsel
Ioffe Physical–Technical Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021