Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
- 作者: Bolshakov A.1, Chaldyshev V.1, Zavarin E.1, Sakharov A.1, Lundin V.1, Tsatsulnikov A.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 11 (2016)
- 页面: 1431-1434
- 栏目: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198246
- DOI: https://doi.org/10.1134/S1063782616110051
- ID: 198246
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详细
The optical reflectance and transmittance spectra of a periodic InGaN/GaN semiconductor heterostructure with 60 quantum wells are studied at room temperature. The period of the structure was chosen such that, at some angles of incidence of light, the energy of a photon resonantly reflected from the Bragg structure coincides with the excitation energy for quantum-well excitons in quantum wells. The parameters of these excitons are determined by fitting the spectra measured at two different angles of incidence, 30° and 60°. We take into account the resonant exciton transitions in quantum wells as well as the transitions into the continuous spectrum. The radiative decay parameter is determined to be (0.20 ± 0.02) meV.
作者简介
A. Bolshakov
Ioffe Physical–Technical Institute
Email: chald.gvg@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Chaldyshev
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: chald.gvg@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute
Email: chald.gvg@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Sakharov
Ioffe Physical–Technical Institute
Email: chald.gvg@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Lundin
Ioffe Physical–Technical Institute
Email: chald.gvg@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Tsatsulnikov
Ioffe Physical–Technical Institute
Email: chald.gvg@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021