Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors
- 作者: Kaminskii V.1, Kazanin M.1, Romanova M.1, Kamenskaya G.1, Sharenkova N.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 9 (2016)
- 页面: 1141-1144
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197794
- DOI: https://doi.org/10.1134/S1063782616090116
- ID: 197794
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详细
The electrical parameters of polycrystalline Sm1–xEuxS compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.
作者简介
V. Kaminskii
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kazanin
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Romanova
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Kamenskaya
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Sharenkova
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021