Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors


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Аннотация

The electrical parameters of polycrystalline Sm1–xEuxS compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.

Авторлар туралы

V. Kaminskii

Ioffe Physical–Technical Institute

Хат алмасуға жауапты Автор.
Email: vladimir.kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021

M. Kazanin

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021

M. Romanova

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021

G. Kamenskaya

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021

N. Sharenkova

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Ресей, St. Petersburg, 194021

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