Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The electrical parameters of polycrystalline Sm1–xEuxS compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.

Sobre autores

V. Kaminskii

Ioffe Physical–Technical Institute

Autor responsável pela correspondência
Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021

M. Kazanin

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021

M. Romanova

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021

G. Kamenskaya

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021

N. Sharenkova

Ioffe Physical–Technical Institute

Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2016

Este site utiliza cookies

Ao continuar usando nosso site, você concorda com o procedimento de cookies que mantêm o site funcionando normalmente.

Informação sobre cookies