Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors
- Authors: Kaminskii V.V.1, Kazanin M.M.1, Romanova M.V.1, Kamenskaya G.A.1, Sharenkova N.V.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 9 (2016)
- Pages: 1141-1144
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197794
- DOI: https://doi.org/10.1134/S1063782616090116
- ID: 197794
Cite item
Abstract
The electrical parameters of polycrystalline Sm1–xEuxS compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.
About the authors
V. V. Kaminskii
Ioffe Physical–Technical Institute
Author for correspondence.
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. M. Kazanin
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. V. Romanova
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. A. Kamenskaya
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Sharenkova
Ioffe Physical–Technical Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021