On the photon annealing of silicon-implanted gallium-nitride layers
- 作者: Seleznev B.1, Moskalev G.2, Fedorov D.1,2
-
隶属关系:
- Novgorod State University
- OKB-Planeta, Inc.
- 期: 卷 50, 编号 6 (2016)
- 页面: 832-838
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197319
- DOI: https://doi.org/10.1134/S1063782616060221
- ID: 197319
如何引用文章
详细
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
作者简介
B. Seleznev
Novgorod State University
编辑信件的主要联系方式.
Email: Boris.Seleznev@novsu.ru
俄罗斯联邦, Velikii Novgorod, 173004
G. Moskalev
OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
俄罗斯联邦, Velikii Novgorod, 173004
D. Fedorov
Novgorod State University; OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
俄罗斯联邦, Velikii Novgorod, 173004; Velikii Novgorod, 173004