On the photon annealing of silicon-implanted gallium-nitride layers
- Авторлар: Seleznev B.1, Moskalev G.2, Fedorov D.1,2
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Мекемелер:
- Novgorod State University
- OKB-Planeta, Inc.
- Шығарылым: Том 50, № 6 (2016)
- Беттер: 832-838
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197319
- DOI: https://doi.org/10.1134/S1063782616060221
- ID: 197319
Дәйексөз келтіру
Аннотация
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
Авторлар туралы
B. Seleznev
Novgorod State University
Хат алмасуға жауапты Автор.
Email: Boris.Seleznev@novsu.ru
Ресей, Velikii Novgorod, 173004
G. Moskalev
OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
Ресей, Velikii Novgorod, 173004
D. Fedorov
Novgorod State University; OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
Ресей, Velikii Novgorod, 173004; Velikii Novgorod, 173004