Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
- 作者: Sokolova Z.1, Bakhvalov K.1, Lyutetskiy A.1, Pikhtin N.1, Tarasov I.1, Asryan L.2
-
隶属关系:
- Ioffe Physical–Technical Institute
- Virginia Polytechnic Institute and State University
- 期: 卷 50, 编号 5 (2016)
- 页面: 667-670
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197136
- DOI: https://doi.org/10.1134/S1063782616050225
- ID: 197136
如何引用文章
详细
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.
作者简介
Z. Sokolova
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: zina.sokolova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Bakhvalov
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lyutetskiy
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Pikhtin
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
L. Asryan
Virginia Polytechnic Institute and State University
Email: zina.sokolova@mail.ioffe.ru
美国, Blacksburg, Virginia, 24061