Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
- Авторлар: Sokolova Z.1, Bakhvalov K.1, Lyutetskiy A.1, Pikhtin N.1, Tarasov I.1, Asryan L.2
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Мекемелер:
- Ioffe Physical–Technical Institute
- Virginia Polytechnic Institute and State University
- Шығарылым: Том 50, № 5 (2016)
- Беттер: 667-670
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197136
- DOI: https://doi.org/10.1134/S1063782616050225
- ID: 197136
Дәйексөз келтіру
Аннотация
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.
Негізгі сөздер
Авторлар туралы
Z. Sokolova
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: zina.sokolova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
K. Bakhvalov
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Lyutetskiy
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Pikhtin
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: zina.sokolova@mail.ioffe.ru
Ресей, St. Petersburg, 194021
L. Asryan
Virginia Polytechnic Institute and State University
Email: zina.sokolova@mail.ioffe.ru
АҚШ, Blacksburg, Virginia, 24061