Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
- 作者: Il’inskaya N.1, Karandashev S.1, Karpukhina N.2, Lavrov A.1,2, Matveev B.1, Remennyi M.1, Stus N.1,2, Usikova A.1
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隶属关系:
- Ioffe Institute
- Limited Liability Company Ioffe LED Ltd.
- 期: 卷 50, 编号 5 (2016)
- 页面: 646-651
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197108
- DOI: https://doi.org/10.1134/S1063782616050122
- ID: 197108
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详细
The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n+-InAs with the n+-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.
作者简介
N. Il’inskaya
Ioffe Institute
编辑信件的主要联系方式.
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021
N. Karpukhina
Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
B. Matveev
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021
N. Stus
Ioffe Institute; Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, St. Petersburg, 194021