Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
- Авторы: Il’inskaya N.1, Karandashev S.1, Karpukhina N.2, Lavrov A.1,2, Matveev B.1, Remennyi M.1, Stus N.1,2, Usikova A.1
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Учреждения:
- Ioffe Institute
- Limited Liability Company Ioffe LED Ltd.
- Выпуск: Том 50, № 5 (2016)
- Страницы: 646-651
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197108
- DOI: https://doi.org/10.1134/S1063782616050122
- ID: 197108
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Аннотация
The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n+-InAs with the n+-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.
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Об авторах
N. Il’inskaya
Ioffe Institute
Автор, ответственный за переписку.
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021
N. Karpukhina
Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
B. Matveev
Ioffe Institute
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021
N. Stus
Ioffe Institute; Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Россия, St. Petersburg, 194021