Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
- Autores: Il’inskaya N.1, Karandashev S.1, Karpukhina N.2, Lavrov A.1,2, Matveev B.1, Remennyi M.1, Stus N.1,2, Usikova A.1
-
Afiliações:
- Ioffe Institute
- Limited Liability Company Ioffe LED Ltd.
- Edição: Volume 50, Nº 5 (2016)
- Páginas: 646-651
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197108
- DOI: https://doi.org/10.1134/S1063782616050122
- ID: 197108
Citar
Resumo
The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n+-InAs with the n+-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.
Palavras-chave
Sobre autores
N. Il’inskaya
Ioffe Institute
Autor responsável pela correspondência
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021
N. Karpukhina
Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
B. Matveev
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021
N. Stus
Ioffe Institute; Limited Liability Company Ioffe LED Ltd.
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, St. Petersburg, 194021