Ab Initio Calculations of Phonon Dispersion in ZnGa2Se4
- 作者: Dzhakhangirli Z.1,2, Kerimova T.1, Abdullaev N.1,2
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隶属关系:
- Institute of Physics
- Azerbaijan Technical University
- 期: 卷 50, 编号 3 (2016)
- 页面: 285-288
- 栏目: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/196850
- DOI: https://doi.org/10.1134/S1063782616030088
- ID: 196850
如何引用文章
详细
In the context of density functional theory, the phonon density of states and phonon dispersion are calculated for ZnGa2Se4. The temperature dependence of the heat capacity of ZnGa2Se4 in the temperature range 5–400 K is obtained. The calculated frequencies and symmetries of phonon modes in the center of the Brillouin zone are in good agreement with experimental data obtained by Raman spectroscopy and infrared spectroscopy.
作者简介
Z. Dzhakhangirli
Institute of Physics; Azerbaijan Technical University
编辑信件的主要联系方式.
Email: cahanzakir@yahoo.com
阿塞拜疆, Baku, Az-1143; Baku, Az-1073
T. Kerimova
Institute of Physics
Email: cahanzakir@yahoo.com
阿塞拜疆, Baku, Az-1143
N. Abdullaev
Institute of Physics; Azerbaijan Technical University
Email: cahanzakir@yahoo.com
阿塞拜疆, Baku, Az-1143; Baku, Az-1073