Ab Initio Calculations of Phonon Dispersion in ZnGa2Se4
- Авторлар: Dzhakhangirli Z.1,2, Kerimova T.1, Abdullaev N.1,2
-
Мекемелер:
- Institute of Physics
- Azerbaijan Technical University
- Шығарылым: Том 50, № 3 (2016)
- Беттер: 285-288
- Бөлім: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/196850
- DOI: https://doi.org/10.1134/S1063782616030088
- ID: 196850
Дәйексөз келтіру
Аннотация
In the context of density functional theory, the phonon density of states and phonon dispersion are calculated for ZnGa2Se4. The temperature dependence of the heat capacity of ZnGa2Se4 in the temperature range 5–400 K is obtained. The calculated frequencies and symmetries of phonon modes in the center of the Brillouin zone are in good agreement with experimental data obtained by Raman spectroscopy and infrared spectroscopy.
Негізгі сөздер
Авторлар туралы
Z. Dzhakhangirli
Institute of Physics; Azerbaijan Technical University
Хат алмасуға жауапты Автор.
Email: cahanzakir@yahoo.com
Әзірбайжан, Baku, Az-1143; Baku, Az-1073
T. Kerimova
Institute of Physics
Email: cahanzakir@yahoo.com
Әзірбайжан, Baku, Az-1143
N. Abdullaev
Institute of Physics; Azerbaijan Technical University
Email: cahanzakir@yahoo.com
Әзірбайжан, Baku, Az-1143; Baku, Az-1073