Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
- 作者: Tikhomirov V.1,2, Zemlyakov V.2,3, Volkov V.2, Parnes Y.2, Vyuginov V.2, Lundin W.4,5, Sakharov A.4,5, Zavarin E.4,5, Tsatsulnikov A.4,5, Cherkashin N.6, Mizerov M.4, Ustinov V.5
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隶属关系:
- Saint Petersburg Electrotechnical University “LETI”
- Joint Stock Company “Svetlana-Electronpribor”
- National Research University of Electronic Technology (MIET)
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Ioffe Physical–Technical Institute
- CEMES-CNRS-Université de Toulouse
- 期: 卷 50, 编号 2 (2016)
- 页面: 244-248
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196804
- DOI: https://doi.org/10.1134/S1063782616020263
- ID: 196804
如何引用文章
详细
The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
作者简介
V. Tikhomirov
Saint Petersburg Electrotechnical University “LETI”; Joint Stock Company “Svetlana-Electronpribor”
编辑信件的主要联系方式.
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Prof. Popova 5, St. Petersburg, 197376; pr. Engelsa 27, korp. 164, St. Petersburg, 194021
V. Zemlyakov
Joint Stock Company “Svetlana-Electronpribor”; National Research University of Electronic Technology (MIET)
Email: VV11111@yandex.ru
俄罗斯联邦, pr. Engelsa 27, korp. 164, St. Petersburg, 194021; 4806 proezd 5, Zelenograd, Moscow oblast, 124498
V. Volkov
Joint Stock Company “Svetlana-Electronpribor”
Email: VV11111@yandex.ru
俄罗斯联邦, pr. Engelsa 27, korp. 164, St. Petersburg, 194021
Ya. Parnes
Joint Stock Company “Svetlana-Electronpribor”
Email: VV11111@yandex.ru
俄罗斯联邦, pr. Engelsa 27, korp. 164, St. Petersburg, 194021
V. Vyuginov
Joint Stock Company “Svetlana-Electronpribor”
Email: VV11111@yandex.ru
俄罗斯联邦, pr. Engelsa 27, korp. 164, St. Petersburg, 194021
W. Lundin
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Sakharov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Zavarin
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
N. Cherkashin
CEMES-CNRS-Université de Toulouse
Email: VV11111@yandex.ru
法国, 29 Rue Jeanne Marvig, Toulouse, 31055
M. Mizerov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Ustinov
Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021