Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
- Авторлар: Tikhomirov V.1,2, Zemlyakov V.2,3, Volkov V.2, Parnes Y.2, Vyuginov V.2, Lundin W.4,5, Sakharov A.4,5, Zavarin E.4,5, Tsatsulnikov A.4,5, Cherkashin N.6, Mizerov M.4, Ustinov V.5
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Мекемелер:
- Saint Petersburg Electrotechnical University “LETI”
- Joint Stock Company “Svetlana-Electronpribor”
- National Research University of Electronic Technology (MIET)
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Ioffe Physical–Technical Institute
- CEMES-CNRS-Université de Toulouse
- Шығарылым: Том 50, № 2 (2016)
- Беттер: 244-248
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196804
- DOI: https://doi.org/10.1134/S1063782616020263
- ID: 196804
Дәйексөз келтіру
Аннотация
The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
Авторлар туралы
V. Tikhomirov
Saint Petersburg Electrotechnical University “LETI”; Joint Stock Company “Svetlana-Electronpribor”
Хат алмасуға жауапты Автор.
Email: VV11111@yandex.ru
Ресей, ul. Prof. Popova 5, St. Petersburg, 197376; pr. Engelsa 27, korp. 164, St. Petersburg, 194021
V. Zemlyakov
Joint Stock Company “Svetlana-Electronpribor”; National Research University of Electronic Technology (MIET)
Email: VV11111@yandex.ru
Ресей, pr. Engelsa 27, korp. 164, St. Petersburg, 194021; 4806 proezd 5, Zelenograd, Moscow oblast, 124498
V. Volkov
Joint Stock Company “Svetlana-Electronpribor”
Email: VV11111@yandex.ru
Ресей, pr. Engelsa 27, korp. 164, St. Petersburg, 194021
Ya. Parnes
Joint Stock Company “Svetlana-Electronpribor”
Email: VV11111@yandex.ru
Ресей, pr. Engelsa 27, korp. 164, St. Petersburg, 194021
V. Vyuginov
Joint Stock Company “Svetlana-Electronpribor”
Email: VV11111@yandex.ru
Ресей, pr. Engelsa 27, korp. 164, St. Petersburg, 194021
W. Lundin
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Sakharov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Zavarin
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
N. Cherkashin
CEMES-CNRS-Université de Toulouse
Email: VV11111@yandex.ru
Франция, 29 Rue Jeanne Marvig, Toulouse, 31055
M. Mizerov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: VV11111@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Ustinov
Ioffe Physical–Technical Institute
Email: VV11111@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021