Информация об авторе

Neverov, V. N.

Выпуск	Раздел	Название	Файл
Том 50, № 12 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures
Том 51, № 2 (2017)	Fabrication, Treatment, and Testing of Materials and Structures	The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination
Том 52, № 1 (2018)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Electron Effective Mass and g Factor in Wide HgTe Quantum Wells
Том 52, № 11 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase
Том 52, № 12 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
Том 52, № 15 (2018)	Erratum	Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures