Информация об авторе

Gorshkov, O. N.

Выпуск	Раздел	Название	Файл
Том 50, № 12 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer
Том 50, № 12 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
Том 52, № 4 (2018)	XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties	Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters
Том 52, № 12 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Behavioral Features of MIS Memristors with a Si₃N₄ Nanolayer Fabricated on a Conductive Si Substrate