Информация об авторе

Kalentyeva, I. L.

Выпуск	Раздел	Название	Файл
Том 50, № 2 (2016)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	GaAs structures with a gate dielectric based on aluminum-oxide layers
Том 50, № 11 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn
Том 51, № 11 (2017)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Features of the selective manganese doping of GaAs structures
Том 52, № 11 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures
Том 53, № 3 (2019)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition