Информация об авторе

Surovegina, E. A.

Выпуск	Раздел	Название	Файл
Том 50, № 11 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
Том 50, № 12 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Том 51, № 8 (2017)	Erratum	Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
Том 51, № 11 (2017)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
Том 52, № 11 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Study of the Structural and Morphological Properties of HPHT Diamond Substrates