Информация об авторе

Bolshakov, A. D.

Выпуск	Раздел	Название	Файл
Том 50, № 11 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires
Том 52, № 4 (2018)	XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures	Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential
Том 52, № 14 (2018)	Infrared Microwave Phenomena in Nanostructures	Effect of the Conductive Channel Cut-Off on Operation of n⁺–n–n⁺ GaN NW-Based Gunn Diode
Том 52, № 16 (2018)	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY	Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires
Том 52, № 16 (2018)	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY	Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
Том 53, № 14 (2019)	Nanostructures Characterization	Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes