The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K

Аннотация

The effects of film thickness and block size on the Hall and Seebeck effects in bismuth films on mica substrates are analyzed using experimental data. A preferential decrease in the electron contribution with a decrease in the film thickness and a preferential decrease in the hole contribution with a decrease in the block size are established. The Hall and Seebeck coefficients are calculated using the classical size effect with regard to carrier scattering at block boundaries and anisotropy of the properties of carriers. In the calculation, the electron and hole mobility components and their concentration in a bismuth single crystal are used and the crystallographic orientation of the film crystal are taken into account. The results of the calculation are in good agreement with the experimental data. It is concluded that the value and sign of the Hall and Seebeck coefficients in bismuth films are determined by the competition of the classical size effect and scattering at block boundaries.