Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition
- Авторы: Akimov A.1, Klimov A.1,2, Paschin N.1, Yaroshevich A.1, Savchenko M.1, Epov V.1, Fedosenko E.1
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State Technical University
- Выпуск: Том 51, № 11 (2017)
- Страницы: 1522-1526
- Раздел: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201903
- DOI: https://doi.org/10.1134/S1063782617110033
- ID: 201903
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Аннотация
PbSnTe:In films with a long-wavelength sensitivity limit of over 20 μm and low “dark” conductivity are studied. The spectral dependences of the photoconductivity obtained at different temperatures using a Fourier spectrometer are compared with data on the film composition determined by X-ray microanalysis. The established nonmonotonic temperature dependence of the long-wavelength sensitivity limit is attributed to the combination of the temperature dependence of the PbSnTe band gap and the Burstein–Moss effect making the largest contribution to low-temperature measurements due to the long lifetime of excess charge carriers. It is shown that the difference between the band-gap values determined from the measured composition and temperature dependences of the long-wavelength sensitivity limit can be related to the inhomogeneity of the composition of the films grown by molecular beam epitaxy.
Об авторах
A. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Автор, ответственный за переписку.
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630073
N. Paschin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Yaroshevich
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090
M. Savchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090
E. Fedosenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Россия, Novosibirsk, 630090