Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition
- Authors: Akimov A.N.1, Klimov A.E.1,2, Paschin N.S.1, Yaroshevich A.S.1, Savchenko M.L.1, Epov V.S.1, Fedosenko E.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State Technical University
- Issue: Vol 51, No 11 (2017)
- Pages: 1522-1526
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201903
- DOI: https://doi.org/10.1134/S1063782617110033
- ID: 201903
Cite item
Abstract
PbSnTe:In films with a long-wavelength sensitivity limit of over 20 μm and low “dark” conductivity are studied. The spectral dependences of the photoconductivity obtained at different temperatures using a Fourier spectrometer are compared with data on the film composition determined by X-ray microanalysis. The established nonmonotonic temperature dependence of the long-wavelength sensitivity limit is attributed to the combination of the temperature dependence of the PbSnTe band gap and the Burstein–Moss effect making the largest contribution to low-temperature measurements due to the long lifetime of excess charge carriers. It is shown that the difference between the band-gap values determined from the measured composition and temperature dependences of the long-wavelength sensitivity limit can be related to the inhomogeneity of the composition of the films grown by molecular beam epitaxy.
About the authors
A. N. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. E. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Author for correspondence.
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
N. S. Paschin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. S. Yaroshevich
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. L. Savchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. S. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
E. V. Fedosenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090